收藏本站
IRF640N/S/L
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
Conditions
V (BR)DSS
Drain-to-Source Breakdown Voltage
200
–––
––– V V GS = 0V, I D = 250μA
? V (BR)DSS / ? T J
Breakdown Voltage Temp. Coefficient
–––
0.25
–––
V/°C
Reference to 25°C, I D = 1mA
R DS(on)
Static Drain-to-Source On-Resistance
–––
–––
0.15
?
V GS = 10V, I D = 11A
?
––– R G = 2.5 ?
V GS(th)
g fs
I DSS
I GSS
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
2.0
6.8
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
10
19
23
5.5
4.0 V V DS = V GS , I D = 250μA
––– S V DS = 50V, I D = 11A ?
25 V DS = 200V, V GS = 0V
μA
250 V DS = 160V, V GS = 0V, T J = 150°C
100 V GS = 20V
nA
-100 V GS = -20V
67 I D = 11A
11 nC V DS = 160V
33 V GS = 10V, See Fig. 6 and 13
––– V DD = 100V
––– I D = 11A
ns
––– R D = 9.0 ? , See Fig. 10 ?
L D
L S
Internal Drain Inductance
Internal Source Inductance
–––
–––
4.5
7.5
–––
–––
nH
Between lead,
6mm (0.25in.)
from package
and center of die contact
G
D
S
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
1160
185
53
––– V GS = 0V
––– V DS = 25V
––– pF ? = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
A
integral reverse
I S
I SM
V SD
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) ?
Diode Forward Voltage
MOSFET symbol
––– ––– 18
showing the
G
––– ––– 72
p-n junction diode.
––– ––– 1.3 V T J = 25°C, I S = 11A, V GS = 0V ?
D
S
t rr
Q rr
t on
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
––– 167 251 ns T J = 25°C, I F = 11A
––– 929 1394 nC di/dt = 100A/μs ?
Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D )
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JC
R θ CS
R θ JA
R θ JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface ?
Junction-to-Ambient ?
Junction-to-Ambient (PCB mount) ?
–––
0.50
–––
–––
1.0
–––
62
40
°C/W
www.irf.com
2
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
IRF644B_FP001 MOSFET N-CH 250V 14A TO-220
IRF6603TR1 MOSFET N-CH 30V 27A DIRECTFET
IRF6604TR1 MOSFET N-CH 30V 12A DIRECTFET
IRF6607TR1 MOSFET N-CH 30V 27A DIRECTFET
IRF6613 MOSFET N-CH 40V DIRECTFET-MT
IRF6614TR1 MOSFET N-CH 40V DIRECTFET-ST
IRF6633TR1 MOSFET N-CH 20V 16A DIRECTFET-MP
IRF6644TR1 MOSFET N-CH 100V DIRECTFET-MN
相关代理商/技术参数
IRF640NLHR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-262
IRF640NLPBF 功能描述:MOSFET MOSFT 200V 18A 150mOhm 44.7nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRF640NPBF 功能描述:MOSFET MOSFT 200V 18A 150mOhm 44.7nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRF640NS 制造商:International Rectifier 功能描述:MOSFET N D2-PAK
IRF640NSHR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) D2PAK 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 200V 18A 3PIN D2PAK - Rail/Tube
IRF640NSPBF 功能描述:MOSFET 30V 1 N-CH 150mOhm HEXFET 200V VDSS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRF640NSTRL 制造商:International Rectifier 功能描述: 制造商:International Rectifier 功能描述:MOSFET Transistor, N-Channel, TO-263AB
IRF640NSTRLHR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) D2PAK T/R 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 200V 18A 3PIN D2PAK - Tape and Reel 制造商:International Rectifier 功能描述:Single N-Channel 200 V 150 W 67nC Hexfet Power Mosfet Surface Mount - D2PAK